一、CGHV38375F產(chǎn)品描述

1.CGHV38375F 產(chǎn)品特性

CGHV38375F   400 W, 2.75 - 3.75 GHz, Internally-Matched, GaN on SiC Transistor (IM-FET)PN: CGHV38375FPackage Type: 440226Typical Performance Over 2.75 - 3.75 GHz (TC = 25?C)Notes:1 VDD = 50 V, IDQ = 500 mA2 Measured at Pin = -10 dBm3 Measured at Pin = 46 dBm and 100 μs; Duty Cycle = 10%Parameter 2.75 GHz 2.9 GHz 3.3 GHz 3.5 GHz 3.75 GHz UnitsSmall Signal Gain1,2 10.0 12.5 12.6 12.6 13.5 dBOutput Power1,3 55.9 57.4 57.5 57.7 56.8 dBmPower Gain1,3 9.9 11.4 11.5 11.7 10.8 dBDrain Efficiency1,3 50 67 62 60 60 %Figure 1.Features? Full S-Band Radar Coverge? 400 W Typical PSAT? 55% Typical Drain Efficiency? >10 dB Large Signal Gain? Pulsed and CW OperationNote: Features are typical performance acrossfrequency under 25°C, pulsed operation. Pleasereference performance charts for additionaldetails.Applications? Civil and Military, Pulsedand CW S-Band RadarDescriptionWolfspeed's CGHV38375F is a packaged, 400 W HPA matched to 50 ohms at both input andoutput ports. The CGHV38375F operates from 2.75 - 3.75 GHz providing coverage over theentire S-Band radar band. This high-power amplifier provides >10 dB of large signal gain and40% power-added efficiency and is ideally suited as a high-power building block supportingboth pulsed and CW radar applications. 

2.CGHV38375F技術(shù)規(guī)格

二、CGHV38375F 應(yīng)用領(lǐng)域

CGHV38375F  Features? Full S-Band Radar Coverge? 400 W Typical PSAT? 55% Typical Drain Efficiency? >10 dB Large Signal Gain? Pulsed and CW OperationNote: Features are typical performance acrossfrequency under 25°C, pulsed operation. Pleasereference performance charts for additionaldetails.

 

CGHV38375F  Applications? Civil and Military, Pulsedand CW S-Band Radar 

三、CGHV38375F 應(yīng)用電路圖

CGHV38375F 總結(jié)

以上就是今天要講的內(nèi)容，本文僅僅簡單介紹了CGHV38375F 產(chǎn)品的使用，我們提供了大量方案產(chǎn)品，歡迎聯(lián)系，感謝您的關(guān)注。