本文闡述了Banba 和Leung 兩種基本帶隙基準(zhǔn)電壓源電路的工作原理，分析了Leung
結(jié)構(gòu)對(duì)于Banba 結(jié)構(gòu)改進(jìn)的方法，分別對(duì)兩個(gè)電路的參數(shù)進(jìn)行了設(shè)計(jì)，并仿真其性能，由此來比較了它們各自的特點(diǎn)。得到的結(jié)論是Banba 結(jié)構(gòu)的輸出電壓溫度系數(shù)更小，而Leung結(jié)構(gòu)的最低電源電壓可以降到1V 左右，有益于向低電壓設(shè)計(jì)的發(fā)展。仿真采用SMIC0.18um 標(biāo)準(zhǔn)CMOS Spice 工藝模型在Hspice 中進(jìn)行，兩者的輸出電壓都在0.5V 左右，溫度系數(shù)在10e-5 數(shù)量級(jí)，成品受到其他非理想因素的影響，溫度系數(shù)會(huì)大一點(diǎn)。由于時(shí)間和設(shè)備有限，暫時(shí)無法實(shí)現(xiàn)成成品，所以目前所有指標(biāo)都是仿真理想值。
關(guān)鍵詞—能隙源，低電壓，溫度無關(guān)

Two bandgap circuits – a Banba one and a Leung one are presented in this work. It also
includes the analysis of their working principles and the design of the perimeters, the simulation of their functions. At last, it compares their differences. The former one bears less temperature dependence and the later can lower the minimum supply voltage to about 1V, which could be used for low voltage design. This work is simulated by Hspice with the SMIC 0.18um technology. Both of the reference voltages generated are about 0.5V. Their temperature
coefficient is about 10e-5, but the product after manufacture may be influenced by other
imperfect aspects. Since the limits of time and devices, I have only got the last product of these circuits, so the results printed are all simulation results.
Index Terms——Bandgap reference, low voltage, temperature independent