寬禁帶（WBG）解決方案將能效提升到了新高度。憑借其更高的功率密度和更小的封裝尺寸，它們是實(shí)現(xiàn)可持續(xù)設(shè)計(jì)的關(guān)鍵。英飛凌的WBG產(chǎn)品組合表現(xiàn)如何？能為開(kāi)發(fā)者帶來(lái)哪些益處？

英飛凌全球?qū)捊麕ч_(kāi)發(fā)者論壇，2025年3月11日北京時(shí)間下午4點(diǎn)，全天直播即將開(kāi)啟！

01

英飛凌科技零碳工業(yè)功率事業(yè)部總裁Peter Wawer博士和電源與傳感器系統(tǒng)事業(yè)部總裁Adam White發(fā)表主題演講，深入分享市場(chǎng)發(fā)展趨勢(shì)和英飛凌的寬禁帶（WBG）戰(zhàn)略。

02

包含英飛凌全系列的寬禁帶（WBG）功率半導(dǎo)體產(chǎn)品，包括分立器件、模塊以及高集成度解決方案，其中GaN產(chǎn)品涵蓋40V至700V，SiC產(chǎn)品涵蓋400V至3.3kV，釋放SiC和GaN的全部潛力，提供極致的設(shè)計(jì)靈活性。

03

涵蓋碳化硅（SiC）和氮化鎵（GaN）的全面技術(shù)分享，深入探討是什么讓CoolSiC和CoolGaN成為太陽(yáng)能、儲(chǔ)能、逆變器設(shè)計(jì)以及車(chē)載電動(dòng)汽車(chē)充電等應(yīng)用的理想解決方案。您將看到許多不同的應(yīng)用如何利用SiC和GaN的優(yōu)勢(shì)。

●Top-Side Cooling (TSC) solutions for industrial andrenewable applications with SiC MOSFET

Qurat Akbar

Staff Product Application Engineer for Discrete SiC MOSFETs & diodes

●SiC 2.3 kV power modules asenabler towards a clean energy transition –

examples for wind and energy storagesystems

Dr. Marcel Morisse

Principal Engineer High Power Modules

●Keep on driving with WBG innovation for traction inverters

Mark Münzer

Fellow Motor Control Solutions

04

特邀客戶分享項(xiàng)目經(jīng)驗(yàn)以及應(yīng)用體驗(yàn)：

●SiC in Siemens ET200SP e-Starter3RD1

Thomas List

Siemens AG

Product owner

●Advanced multi-variant fusion concept for enhanced traction inverterintelligence, cost effectiveness and practicality

Allen Liu

Suzhou Inovance Automotive Co.,ltd.

Director, Chief Engineer

Hardware Pre-research and Platform R&D Center

報(bào)名后，您將收到一封確認(rèn)電子郵件，內(nèi)含當(dāng)天直播觀看鏈接。

議程一覽（北京時(shí)間）：

16:00 – 16:05

Welcome and introduction

Dr. Peter Friedrichs, Fellow
Eva Gabriel, Director Product Marketing SiC

16:05 – 16:30

Opening Keynote – Expanding ourleadership in power systems through Wide Bandgap

Dr. Peter Wawer

Division President Green Industrial Power

Adam White

Division President Power & Sensor Systems

16:30– 17:00

SiC in Siemens ET200SP e-Starter3RD1

Thomas List

Siemens AG

Product owner

17:00 – 17:30

Advanced multi-variant fusion concept for enhanced traction inverterintelligence, cost effectiveness and practicality

Allen Liu

Suzhou Inovance Automotive Co.,ltd.

Director, Chief Engineer

Hardware Pre-research and Platform R&D Center

17:30 – 18:00

Top-Side Cooling (TSC) solutions for industrial andrenewable applications with SiC MOSFET

Qurat Akbar

Staff Product Application Engineer for Discrete SiC MOSFETs & diodes

18:00 – 18:30

SiC 2.3 kV power modules asenabler towards a clean energy transition –

examples for wind and energy storagesystems

Dr. Marcel Morisse

Principal Engineer High Power Modules

18:30 – 19:00

SiC .XT interconnect: enabling SiC for long lifetime in high power applications

Dr. Torsten Methfessel

Principal Engineer Quality & Reliability

19:00 – 19:30

Challenges and solutions to power latest AI processorgenerations for hyperscale data centers

Dr. Matthias Kasper

Lead Principal Engineer at System Innovations Lab

19:30 – 20:00

Dinner break (Beijing time)

20:00 – 20:30

Why GaN in Photovoltatics?

Richard Brace

BRC Solar, Head of Innovation and Research

20:30 – 21:00

Driving the future of Motor Control with 650V GaN

Ariza Javier

Principal System Application Engineer power conversion

21:00 – 21:30

Highly integrated coin-sized 1 kW GaN-basedmotor drive

Dr. Edward A. Jones

Principal Engineer in GaNApplication Development

Dr. Maurizio Incurvati

LeadPrincipal Engineer System Architect for Innovation in Motor Drives

21:30 – 22:00

GaN Monolithic Bi-directional Switch - A New Paradigm in Power Electronics

Dr. Kennith K. Leong

Lead Principal, Product Definition and Concept Engineer for CoolGaN HV BDS

22:00 – 22:15

15 Min. Coffee break

22:15 – 22:45

Value Proposition of GaN in OBC

Lucas Lu

Senior Director Technical Marketing GaN Auto

22:45 – 23:15

Keep on driving with WBG innovation for traction inverters

Mark Münzer

Fellow Motor Control Solutions

23:15 – 23:45

Automotive & Industrial MCUs for Software-controlledhigh Density Power Conversion’

Dr. Jürgen Stahl

Principal System Engineering

Klaus Scheibert

Senior Principal PT&xEV

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